BUK72150-55A Todos los transistores

 

BUK72150-55A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK72150-55A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: DPAK

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BUK72150-55A datasheet

 ..1. Size:956K  nxp
buk72150-55a.pdf pdf_icon

BUK72150-55A

BUK72150-55A N-channel TrenchMOS standard level FET Rev. 03 26 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.

 7.1. Size:822K  nxp
buk7215-55a.pdf pdf_icon

BUK72150-55A

BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

 8.1. Size:111K  philips
buk7213-40a.pdf pdf_icon

BUK72150-55A

BUK7213-40A TrenchMOS standard level FET Rev. 01 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible 1.3 Applications

 8.2. Size:191K  philips
buk7210-55b.pdf pdf_icon

BUK72150-55A

BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 11 December 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in

Otros transistores... BUK7109-75AIE , BUK7109-75ATE , BUK714R1-40BT , BUK7207-30B , BUK7208-40B , BUK7210-55B , BUK7212-55B , BUK7214-75B , CS150N03A8 , BUK7215-55A , BUK7219-55A , BUK7222-55A , BUK7225-55A , BUK7226-75A , BUK7227-100B , BUK7230-55A , BUK7237-55A .

 

 

 

 

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