BUK7237-55A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7237-55A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 77 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 32.3 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de BUK7237-55A MOSFET
- Selecciónⓘ de transistores por parámetros
BUK7237-55A datasheet
..1. Size:1130K nxp
buk7237-55a.pdf 
BUK7237-55A N-channel TrenchMOS standard level FET Rev. 02 9 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fea
8.1. Size:277K philips
buk7230-55a 01.pdf
BUK7230-55A TrenchMOS standard level FET Rev. 01 29 September 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7230-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated St
8.2. Size:739K nxp
buk7230-55a.pdf
BUK7230-55A N-channel TrenchMOS standard level FET Rev. 02 16 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F
9.1. Size:214K philips
buk725r0-40c.pdf
BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 23 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance au
9.2. Size:193K philips
buk7226-75a.pdf
BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in
9.3. Size:111K philips
buk7213-40a.pdf
BUK7213-40A TrenchMOS standard level FET Rev. 01 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible 1.3 Applications
9.4. Size:191K philips
buk7210-55b.pdf
BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 11 December 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in
9.5. Size:284K philips
buk7219-55a 01.pdf
BUK7219-55A TrenchMOS standard level FET Rev. 01 02 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7219-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Stan
9.6. Size:282K philips
buk7275-100a 01.pdf
BUK7275-100A TrenchMOS standard level FET Rev. 01 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7275-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated St
9.7. Size:284K philips
buk7240-100a 01.pdf
BUK7240-100A TrenchMOS standard level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7240-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated St
9.8. Size:283K philips
buk7226-75a 01.pdf
BUK7226-75A TrenchMOS standard level FET Rev. 01 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7226-75A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Stan
9.9. Size:113K philips
buk7213 40a.pdf
BUK7213-40A TrenchMOS standard level FET Rev. 01 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible 1.3 Applications
9.10. Size:822K nxp
buk7215-55a.pdf
BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2
9.11. Size:892K nxp
buk7227-100b.pdf
BUK7227-100B N-channel TrenchMOS standard level FET Rev. 02 17 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1
9.12. Size:870K nxp
buk7219-55a.pdf
BUK7219-55A N-channel TrenchMOS standard level FET Rev. 02 3 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2
9.13. Size:882K nxp
buk7240-100a.pdf
BUK7240-100A N-channel TrenchMOS standard level FET Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
9.14. Size:726K nxp
buk7277-55a.pdf
BUK7277-55A N-channel TrenchMOS standard level FET 12 June 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 co
9.15. Size:930K nxp
buk7275-100a.pdf
BUK7275-100A N-channel TrenchMOS standard level FET Rev. 02 17 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F
9.16. Size:726K nxp
buk7210-55b.pdf
BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 11 December 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for u
9.17. Size:802K nxp
buk7222-55a.pdf
BUK7222-55A N-channel TrenchMOS standard level FET Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2
9.18. Size:825K nxp
buk7225-55a.pdf
BUK7225-55A N-channel TrenchMOS standard level FET Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2
9.19. Size:816K nxp
buk7208-40b.pdf
BUK7208-40B N-channel TrenchMOS standard level FET Rev. 03 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fea
9.20. Size:956K nxp
buk72150-55a.pdf
BUK72150-55A N-channel TrenchMOS standard level FET Rev. 03 26 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
Otros transistores... BUK72150-55A
, BUK7215-55A
, BUK7219-55A
, BUK7222-55A
, BUK7225-55A
, BUK7226-75A
, BUK7227-100B
, BUK7230-55A
, 4N60
, BUK7240-100A
, BUK724R5-30C
, BUK725R0-40C
, BUK7275-100A
, BUK7277-55A
, BUK7504-40A
, BUK7506-55A
, BUK7506-55B
.
History: IPB100N04S2L-03
