BUK725R0-40C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK725R0-40C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 157 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 60 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: DPAK

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BUK725R0-40C Datasheet (PDF)

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buk725r0-40c.pdf

BUK725R0-40CN-channel TrenchMOS standard level FETRev. 01 23 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance au

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buk7213-40a.pdf

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buk7210-55b.pdf

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buk7219-55a 01.pdf

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buk7275-100a 01.pdf

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buk7240-100a 01.pdf

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buk7230-55a 01.pdf

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buk7226-75a 01.pdf

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buk7240-100a.pdf

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buk7275-100a.pdf

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buk7225-55a.pdf

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