BUK7514-55A Todos los transistores

 

BUK7514-55A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7514-55A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 166 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 73 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO220AB

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BUK7514-55A datasheet

 ..1. Size:68K  philips
buk7514-55a buk7614-55a.pdf pdf_icon

BUK7514-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard level FET BUK7614-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 73 A Using trench tec

 4.1. Size:52K  philips
buk7514-55 2.pdf pdf_icon

BUK7514-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 68 A features very low on-state

 6.1. Size:50K  philips
buk7514-30 1.pdf pdf_icon

BUK7514-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 69 A features very low on-state

 6.2. Size:207K  nxp
buk7514-60e.pdf pdf_icon

BUK7514-55A

BUK7514-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repet

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