BUK75150-55A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK75150-55A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de BUK75150-55A MOSFET
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BUK75150-55A datasheet
buk75150-55a buk76150-55a.pdf
BUK75/76150-55A TrenchMOS standard level FET Rev. 02 25 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible. 1.3 Applicat
buk7515-100a.pdf
BUK7515-100A N-channel TrenchMOS standard level FET Rev. 3 21 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F
buk7515-100a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7515-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 100 V trench technology which features ID Drain current (DC) 75 A very low on-state res
Otros transistores... BUK7509-55A, BUK7509-75A, BUK7510-100B, BUK7510-55AL, BUK7511-55A, BUK7511-55B, BUK7513-75B, BUK7514-55A, IRF1405, BUK7515-100A, BUK7516-55A, BUK7520-100A, BUK7520-55A, BUK7523-75A, BUK7526-100B, BUK7528-100A, BUK7528-55A
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