BUK7606-75B Todos los transistores

 ..1. Size:322K  philips
 buk7506-75b buk7606-75b.pdf

BUK75/7606-75B TrenchMOS standard level FET Rev. 02 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-stat

 ..2. Size:977K  nxp
 buk7606-75b.pdf

BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

 6.1. Size:320K  philips
 buk7506-55a buk7606-55a.pdf

BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q10

 6.2. Size:56K  philips
 buk7606-55a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the dev

 6.3. Size:52K  philips
 buk7606-30 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 75 A trench technology. The devi

 6.4. Size:910K  nxp
 buk7606-55a.pdf

BUK7606-55A N-channel TrenchMOS standard level FET Rev. 03 1 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

 6.5. Size:941K  nxp
 buk7606-55b.pdf

BUK7606-55B N-channel TrenchMOS standard level FET Rev. 02 21 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe