BUK7609-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK7609-55A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 211 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 62 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET BUK7609-55A

BUK7609-55A Datasheet (PDF)

..1. Size:314K philips
buk7509-55a buk7609-55a.pdf

BUK75/7609-55ATrenchMOS standard level FETRev. 01 6 August 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7509-55A in SOT78 (TO-220AB)BUK7609-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 complia

6.1. Size:319K philips
buk7509-75a buk7609-75a.pdf

BUK7509-75A; BUK7609-75ATrenchMOS standard level FETRev. 02 06 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7509-75A in SOT78 (TO-220AB)BUK7609-75A in SOT404 (D 2-PAK).2. Features TrenchMOS te

7.1. Size:318K philips
buk7509 buk7609 75a 02.pdf

8.1. Size:320K philips
buk7506-55a buk7606-55a.pdf

BUK7506-55A; BUK7606-55ATrenchMOS standard level FETRev. 02 03 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7506-55A in SOT78 (TO-220AB)BUK7606-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q10

8.2. Size:55K philips
buk7605-30a 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7605-30A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the dev

8.3. Size:296K philips
buk7507-55b buk7607-55b.pdf

BUK75/7607-55BTrenchMOS standard level FETRev. 01 15 May 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK7507-55B in SOT78 (TO-220AB)BUK7607-55B in SOT404 (D2-PAK).1.2 Features Very low on-stat

8.4. Size:68K philips
buk7508 buk7608-55a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 75 AUsing trench tec

8.5. Size:322K philips
buk7506-75b buk7606-75b.pdf

BUK75/7606-75BTrenchMOS standard level FETRev. 02 20 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK7506-75B in SOT78 (TO-220AB)BUK7606-75B in SOT404 (D2-PAK).1.2 Features Very low on-stat

8.6. Size:56K philips
buk7606-55a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-55A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the dev

8.7. Size:54K philips
buk7608-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the devi

8.8. Size:52K philips
buk7606-30 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 75 Atrench technology. The devi

8.9. Size:298K philips
buk7507-30b buk7607-30b.pdf

BUK75/7607-30BTrenchMOS standard level FETRev. 01 07 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK7507-30B in SOT78 (TO-220AB)BUK7607-30B in SOT404 (D2-PAK).1.2 Features Very low on-st

8.10. Size:55K philips
buk7605-30a.pdf

8.11. Size:910K nxp
buk7606-55a.pdf

BUK7606-55AN-channel TrenchMOS standard level FETRev. 03 1 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

8.12. Size:979K nxp
buk7607-55b.pdf

BUK7607-55BN-channel TrenchMOS standard level FETRev. 2 26 July 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fea

8.13. Size:702K nxp
buk7608-40b.pdf

BUK7608-40BN-channel TrenchMOS standard level FETRev. 04 24 September 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1

8.14. Size:977K nxp
buk7606-75b.pdf

BUK7606-75BN-channel TrenchMOS standard level FETRev. 03 3 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

8.15. Size:941K nxp
buk7606-55b.pdf

BUK7606-55BN-channel TrenchMOS standard level FETRev. 02 21 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe

8.16. Size:785K nxp
buk7608-55a.pdf

BUK7608-55AN-channel TrenchMOS standard level FETRev. 03 14 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe

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