BUK7609-75A Todos los transistores

 ..1. Size:319K  philips
 buk7509-75a buk7609-75a.pdf

BUK7509-75A; BUK7609-75A TrenchMOS standard level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS te

 6.1. Size:314K  philips
 buk7509-55a buk7609-55a.pdf

BUK75/7609-55A TrenchMOS standard level FET Rev. 01 6 August 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7509-55A in SOT78 (TO-220AB) BUK7609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 complia

 7.1. Size:318K  philips
 buk7509 buk7609 75a 02.pdf

BUK7509-75A; BUK7609-75A TrenchMOS standard level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS te

 8.1. Size:320K  philips
 buk7506-55a buk7606-55a.pdf

BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q10

 8.2. Size:55K  philips
 buk7605-30a 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7605-30A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the dev

 8.3. Size:296K  philips
 buk7507-55b buk7607-55b.pdf

BUK75/7607-55B TrenchMOS standard level FET Rev. 01 15 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK7507-55B in SOT78 (TO-220AB) BUK7607-55B in SOT404 (D2-PAK). 1.2 Features Very low on-stat

 8.4. Size:68K  philips
 buk7508 buk7608-55a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 75 A Using trench tec

 8.5. Size:322K  philips
 buk7506-75b buk7606-75b.pdf

BUK75/7606-75B TrenchMOS standard level FET Rev. 02 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-stat

 8.6. Size:56K  philips
 buk7606-55a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the dev

 8.7. Size:54K  philips
 buk7608-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the devi

 8.8. Size:52K  philips
 buk7606-30 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 75 A trench technology. The devi

 8.9. Size:298K  philips
 buk7507-30b buk7607-30b.pdf

BUK75/7607-30B TrenchMOS standard level FET Rev. 01 07 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK7507-30B in SOT78 (TO-220AB) BUK7607-30B in SOT404 (D2-PAK). 1.2 Features Very low on-st

 8.10. Size:55K  philips
 buk7605-30a.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7605-30A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the dev

 8.11. Size:910K  nxp
 buk7606-55a.pdf

BUK7606-55A N-channel TrenchMOS standard level FET Rev. 03 1 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

 8.12. Size:979K  nxp
 buk7607-55b.pdf

BUK7607-55B N-channel TrenchMOS standard level FET Rev. 2 26 July 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fea

 8.13. Size:702K  nxp
 buk7608-40b.pdf

BUK7608-40B N-channel TrenchMOS standard level FET Rev. 04 24 September 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1

 8.14. Size:977K  nxp
 buk7606-75b.pdf

BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

 8.15. Size:941K  nxp
 buk7606-55b.pdf

BUK7606-55B N-channel TrenchMOS standard level FET Rev. 02 21 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe

 8.16. Size:785K  nxp
 buk7608-55a.pdf

BUK7608-55A N-channel TrenchMOS standard level FET Rev. 03 14 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe