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BUK7628-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK7628-100A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 166 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: D2PAK
 

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BUK7628-100A Datasheet (PDF)

 ..1. Size:80K  philips
buk7528 buk7628-100a.pdf pdf_icon

BUK7628-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 47 AUsing trench

 ..2. Size:722K  nxp
buk7628-100a.pdf pdf_icon

BUK7628-100A

BUK7628-100AN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

 6.1. Size:96K  philips
buk7528-55a buk7628-55a.pdf pdf_icon

BUK7628-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 41 AUsing trench tec

 6.2. Size:56K  philips
buk7628-55 2.pdf pdf_icon

BUK7628-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK7628-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 40 Atrench technology the devi

Otros transistores... BUK7614-55A , BUK7619-100B , BUK761R8-30C , BUK7620-100A , BUK7620-55A , BUK7623-75A , BUK7624-55A , BUK7626-100B , 7N65 , BUK7628-55A , BUK762R0-40C , BUK762R7-30B , BUK7635-100A , BUK7635-55A , BUK763R1-40B , BUK763R4-30B , BUK763R6-40C .

History: SUP70N03-09BP | HAT1023R | 2SK3085 | 4N70KG-TA3-T | SSM6K403TU | TDM3744 | BUK7611-55A

 

 
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