BUK7880-55A Todos los transistores

 

BUK7880-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK7880-55A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SC73

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BUK7880-55A Datasheet (PDF)

 ..1. Size:98K  philips
buk7880-55a.pdf

BUK7880-55A
BUK7880-55A

BUK7880-55AN-channel TrenchMOS standard level FETRev. 01 1 November 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP General Purpose Automotive (GPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 150 C rated Standard level compatible

 ..2. Size:758K  nxp
buk7880-55a.pdf

BUK7880-55A
BUK7880-55A

BUK7880-55AN-channel TrenchMOS standard level FET19 June 2015 Product data sheet1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicatio

 ..3. Size:976K  cn vbsemi
buk7880-55a.pdf

BUK7880-55A
BUK7880-55A

BUK7880-55Awww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, un

 4.1. Size:53K  philips
buk7880-55 2.pdf

BUK7880-55A
BUK7880-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7880-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technolgy ID Drain current 7.5 Athe device featu

 9.1. Size:54K  philips
buk78150-55 1.pdf

BUK7880-55A
BUK7880-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK78150-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current 5.5 Athe device fea

 9.2. Size:55K  philips
buk7840-55 1.pdf

BUK7880-55A
BUK7880-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7840-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current 10.7 Athe device fea

 9.3. Size:58K  philips
buk7830-30 1.pdf

BUK7880-55A
BUK7880-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7830-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 Atrench tech

 9.4. Size:926K  nxp
buk78150-55a.pdf

BUK7880-55A
BUK7880-55A

BUK78150-55AN-channel TrenchMOS standard level FETRev. 02 16 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

Otros transistores... BUK764R0-55B , BUK764R0-75C , BUK764R3-40B , BUK765R2-40B , BUK7660-100A , BUK7675-100A , BUK7675-55A , BUK78150-55A , CS150N03A8 , BUK7905-40AI , BUK7905-40AIE , BUK7905-40ATE , BUK7907-40ATC , BUK7907-55AIE , BUK7907-55ATE , BUK7908-40AIE , BUK7909-75AIE .

 

 
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