75307D3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 75307D3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: TO251AA
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75307D3 Datasheet (PDF)
hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf
HUFA75307P3, HUFA75307D3, HUFA75307D3SData Sheet December 200115A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 15A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models
hufa75307t3st.pdf
HUFA75307T3STData Sheet December 20012.6A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFET 2.6A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPIC
huf75307t3st.pdf
HUF75307T3STData Sheet December 20012.6A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFET 2.6A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE
hufa75307t3st.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... 40604 , 40673 , 40819 , 40820 , 40821 , 40822 , 40823 , 40841 , 5N50 , 75307P3 , 75309D , 75309P3 , 75321D3 , 75321P , 75321S , 75329G , 75329P .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918