BUK7E2R7-30B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7E2R7-30B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
Paquete / Cubierta: I2PAK
- Selección de transistores por parámetros
BUK7E2R7-30B Datasheet (PDF)
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Otros transistores... BUK794R1-40BT , BUK7C06-40AITE , BUK7C08-55AITE , BUK7C10-75AITE , BUK7E04-40A , BUK7E07-55B , BUK7E11-55B , BUK7E2R3-40C , IRF830 , BUK7E4R3-75C , BUK7L06-34ARC , BUK7L11-34ARC , BUK7Y07-30B , BUK7Y08-40B , BUK7Y102-100B , BUK7Y10-30B , BUK7Y12-55B .
History: IXTP50N28T | 3SK249
History: IXTP50N28T | 3SK249



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