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BUK7Y18-75B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK7Y18-75B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: LFPAK
     - Selección de transistores por parámetros

 

BUK7Y18-75B Datasheet (PDF)

 ..1. Size:799K  nxp
 buk7y18-75b.pdf pdf_icon

BUK7Y18-75B

BUK7Y18-75BN-channel TrenchMOS standard level FET1 March 2013 Product data sheet1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicati

 6.1. Size:784K  nxp
 buk7y18-55b.pdf pdf_icon

BUK7Y18-75B

BUK7Y18-55BN-channel TrenchMOS standard level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use

 8.1. Size:190K  philips
 buk7y13-40b.pdf pdf_icon

BUK7Y18-75B

BUK7Y13-40BN-channel TrenchMOS standard level FETRev. 03 26 May 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au

 8.2. Size:268K  nxp
 buk7y1r4-40h.pdf pdf_icon

BUK7Y18-75B

BUK7Y1R4-40HN-channel 40 V, 1.4 m standard level MOSFET in LFPAK5631 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Fea

MOSTRAR MÁS

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History: TK3A65DA | IXTX22N100L | TTP30P10AT | HSU90N03 | PMV55ENEA | S2N7002DM | PHB3N60E

 

 
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