BUK7Y25-40B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7Y25-40B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 59.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: LFPAK

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BUK7Y25-40B datasheet

 ..1. Size:806K  nxp
buk7y25-40b.pdf pdf_icon

BUK7Y25-40B

BUK7Y25-40B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use

 6.1. Size:339K  nxp
buk7y25-80e.pdf pdf_icon

BUK7Y25-40B

BUK7Y25-80E N-channel 80 V, 25 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti

 6.2. Size:344K  nxp
buk7y25-60e.pdf pdf_icon

BUK7Y25-40B

BUK7Y25-60E N-channel 60 V, 25 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti

 8.1. Size:265K  nxp
buk7y2r5-40h.pdf pdf_icon

BUK7Y25-40B

BUK7Y2R5-40H N-channel 40 V, 2.5 m standard level MOSFET in LFPAK56 10 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Fea

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