BUK9215-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK9215-55AN-channel TrenchMOS logic level FET7 April 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 complian

Philips Semiconductors Product specification TrenchMOS transistor BUK92150-55A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 10.7 Athe device

BUK92150-55AN-channel TrenchMOS logic level FET12 June 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction l

BUK9213-30ATrenchMOS logic level FETRev. 01 29 July 2002 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9213-30A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level

BUK9219-55ATrenchMOS logic level FETRev. 01 24 October 2000 Product specificationM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9219-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated

BUK9214-30ATrenchMOS logic level FETRev. 01 20 March 2002 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9214-30A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic leve

BUK9219-55AN-channel TrenchMOS logic level FETRev. 02 7 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

BUK9212-55BN-channel TrenchMOS logic level FETRev. 03 3 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

BUK9214-30AN-channel TrenchMOS logic level FETRev. 3 14 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features