BUK9219-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK9219-55AN-channel TrenchMOS logic level FETRev. 02 7 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

BUK9219-55ATrenchMOS logic level FETRev. 01 24 October 2000 Product specificationM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9219-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated

BUK9213-30ATrenchMOS logic level FETRev. 01 29 July 2002 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9213-30A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level

BUK9214-30ATrenchMOS logic level FETRev. 01 20 March 2002 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9214-30A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic leve

Philips Semiconductors Product specification TrenchMOS transistor BUK92150-55A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 10.7 Athe device

BUK92150-55AN-channel TrenchMOS logic level FET12 June 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction l

BUK9212-55BN-channel TrenchMOS logic level FETRev. 03 3 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

BUK9214-30AN-channel TrenchMOS logic level FETRev. 3 14 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

BUK9215-55AN-channel TrenchMOS logic level FET7 April 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 complian