BUK9219-55A Todos los transistores

 ..1. Size:802K  nxp
 buk9219-55a.pdf

BUK9219-55A N-channel TrenchMOS logic level FET Rev. 02 7 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 7.1. Size:294K  philips
 buk9219 55a-01.pdf

BUK9219-55A TrenchMOS logic level FET Rev. 01 24 October 2000 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9219-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated

 8.1. Size:276K  philips
 buk9213-30a.pdf

BUK9213-30A TrenchMOS logic level FET Rev. 01 29 July 2002 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9213-30A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level

 8.2. Size:292K  philips
 buk9214-30a.pdf

BUK9214-30A TrenchMOS logic level FET Rev. 01 20 March 2002 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9214-30A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic leve

 8.3. Size:65K  philips
 buk92150-55a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK92150-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 10.7 A the device

 8.4. Size:719K  nxp
 buk92150-55a.pdf

BUK92150-55A N-channel TrenchMOS logic level FET 12 June 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction l

 8.5. Size:969K  nxp
 buk9212-55b.pdf

BUK9212-55B N-channel TrenchMOS logic level FET Rev. 03 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 8.6. Size:756K  nxp
 buk9214-30a.pdf

BUK9214-30A N-channel TrenchMOS logic level FET Rev. 3 14 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 8.7. Size:725K  nxp
 buk9215-55a.pdf

BUK9215-55A N-channel TrenchMOS logic level FET 7 April 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 complian