BUK9219-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9219-55A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 114 W
Voltaje máximo drenador - fuente |Vds|: 55 V
Voltaje máximo fuente - puerta |Vgs|: 10 V
Corriente continua de drenaje |Id|: 55 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Resistencia entre drenaje y fuente RDS(on): 0.0176 Ohm
Paquete / Cubierta: DPAK
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BUK9219-55A Datasheet (PDF)
buk9219-55a.pdf
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BUK9219-55ATrenchMOS logic level FETRev. 01 24 October 2000 Product specificationM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9219-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated
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BUK9213-30ATrenchMOS logic level FETRev. 01 29 July 2002 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9213-30A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level
buk9214-30a.pdf
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BUK9214-30ATrenchMOS logic level FETRev. 01 20 March 2002 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9214-30A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic leve
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Philips Semiconductors Product specification TrenchMOS transistor BUK92150-55A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 10.7 Athe device
buk92150-55a.pdf
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BUK92150-55AN-channel TrenchMOS logic level FET12 June 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction l
buk9212-55b.pdf
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BUK9212-55BN-channel TrenchMOS logic level FETRev. 03 3 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu
buk9214-30a.pdf
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BUK9214-30AN-channel TrenchMOS logic level FETRev. 3 14 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
buk9215-55a.pdf
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BUK9215-55AN-channel TrenchMOS logic level FET7 April 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 complian
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