BUK9222-55A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9222-55A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 103 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 48 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: DPAK

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BUK9222-55A datasheet

 ..1. Size:966K  nxp
 buk9222-55a.pdf pdf_icon

BUK9222-55A

BUK9222-55A N-channel TrenchMOS logic level FET Rev. 02 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 8.1. Size:290K  philips
 buk9226 75a-01.pdf pdf_icon

BUK9222-55A

BUK9226-75A TrenchMOS logic level FET Rev. 01 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9226-75A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 8.2. Size:970K  nxp
 buk9225-55a.pdf pdf_icon

BUK9222-55A

BUK9225-55A N-channel TrenchMOS logic level FET Rev. 02 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 8.3. Size:824K  nxp
 buk9226-75a.pdf pdf_icon

BUK9222-55A

BUK9226-75A N-channel TrenchMOS logic level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

MOSTRAR MÁS

Otros transistores... BUK9209-40B, BUK9212-55B, BUK9213-30A, BUK9214-30A, BUK92150-55A, BUK9215-55A, BUK9217-75B, BUK9219-55A, MMIS60R580P, BUK9225-55A, BUK9226-75A, BUK9230-100B, BUK9230-55A, BUK9237-55A, BUK9240-100A, BUK9245-55A, BUK9275-100A