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BUK9225-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9225-55A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 43 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: DPAK
 

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BUK9225-55A Datasheet (PDF)

 ..1. Size:970K  nxp
 buk9225-55a.pdf pdf_icon

BUK9225-55A

BUK9225-55AN-channel TrenchMOS logic level FETRev. 02 7 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

 8.1. Size:290K  philips
 buk9226 75a-01.pdf pdf_icon

BUK9225-55A

BUK9226-75ATrenchMOS logic level FETRev. 01 10 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9226-75A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 8.2. Size:966K  nxp
 buk9222-55a.pdf pdf_icon

BUK9225-55A

BUK9222-55AN-channel TrenchMOS logic level FETRev. 02 1 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

 8.3. Size:824K  nxp
 buk9226-75a.pdf pdf_icon

BUK9225-55A

BUK9226-75AN-channel TrenchMOS logic level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

MOSTRAR MÁS

Otros transistores... BUK9212-55B , BUK9213-30A , BUK9214-30A , BUK92150-55A , BUK9215-55A , BUK9217-75B , BUK9219-55A , BUK9222-55A , HY1906P , BUK9226-75A , BUK9230-100B , BUK9230-55A , BUK9237-55A , BUK9240-100A , BUK9245-55A , BUK9275-100A , BUK9277-55A .

History: 2SK1444 | AOB66616L | NVMFS6H824N

 

 
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