BUK9237-55A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9237-55A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 77 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: DPAK

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BUK9237-55A datasheet

 ..1. Size:1002K  nxp
 buk9237-55a.pdf pdf_icon

BUK9237-55A

BUK9237-55A N-channel TrenchMOS logic level FET Rev. 3 9 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur

 7.1. Size:304K  philips
 buk9237 55a-01.pdf pdf_icon

BUK9237-55A

BUK9237-55A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9237-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 8.1. Size:290K  philips
 buk9230 55a-02.pdf pdf_icon

BUK9237-55A

BUK9230-55A TrenchMOS logic level FET Rev. 02 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9230-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 8.2. Size:812K  nxp
 buk9230-100b.pdf pdf_icon

BUK9237-55A

BUK9230-100B N-channel TrenchMOS logic level FET Rev. 02 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feat

MOSTRAR MÁS

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