BUK9240-100A Todos los transistores

 ..1. Size:291K  philips
 buk9240-100a.pdf

BUK9240-100A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9240-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic

 ..2. Size:962K  nxp
 buk9240-100a.pdf

BUK9240-100A N-channel TrenchMOS logic level FET Rev. 02 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature

 ..3. Size:287K  inchange semiconductor
 buk9240-100a.pdf

isc N-Channel MOSFET Transistor BUK9240-100A FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 38.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid driv

 8.1. Size:296K  philips
 buk9245.pdf

BUK9245-55A TrenchMOS logic level FET Rev. 01 11 October 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9245-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic le

 9.1. Size:276K  philips
 buk9213-30a.pdf

BUK9213-30A TrenchMOS logic level FET Rev. 01 29 July 2002 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9213-30A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level

 9.2. Size:290K  philips
 buk9226 75a-01.pdf

BUK9226-75A TrenchMOS logic level FET Rev. 01 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9226-75A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 9.3. Size:304K  philips
 buk9237 55a-01.pdf

BUK9237-55A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9237-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 9.4. Size:286K  philips
 buk9275 100a-01.pdf

BUK9275-100A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9275-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic

 9.5. Size:294K  philips
 buk9219 55a-01.pdf

BUK9219-55A TrenchMOS logic level FET Rev. 01 24 October 2000 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9219-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated

 9.6. Size:292K  philips
 buk9214-30a.pdf

BUK9214-30A TrenchMOS logic level FET Rev. 01 20 March 2002 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9214-30A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic leve

 9.7. Size:290K  philips
 buk9230 55a-02.pdf

BUK9230-55A TrenchMOS logic level FET Rev. 02 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9230-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 9.8. Size:65K  philips
 buk92150-55a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK92150-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 10.7 A the device

 9.9. Size:802K  nxp
 buk9219-55a.pdf

BUK9219-55A N-channel TrenchMOS logic level FET Rev. 02 7 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 9.10. Size:957K  nxp
 buk9207-30b.pdf

BUK9207-30B N-channel TrenchMOS logic level FET Rev. 03 16 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 9.11. Size:966K  nxp
 buk9222-55a.pdf

BUK9222-55A N-channel TrenchMOS logic level FET Rev. 02 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 9.12. Size:812K  nxp
 buk9230-100b.pdf

BUK9230-100B N-channel TrenchMOS logic level FET Rev. 02 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feat

 9.13. Size:953K  nxp
 buk9275-100a.pdf

BUK9275-100A N-channel TrenchMOS logic level FET Rev. 03 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature

 9.14. Size:953K  nxp
 buk9209-40b.pdf

BUK9209-40B N-channel TrenchMOS logic level FET Rev. 03 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 9.15. Size:1002K  nxp
 buk9237-55a.pdf

BUK9237-55A N-channel TrenchMOS logic level FET Rev. 3 9 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur

 9.16. Size:719K  nxp
 buk92150-55a.pdf

BUK92150-55A N-channel TrenchMOS logic level FET 12 June 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction l

 9.17. Size:742K  nxp
 buk9277-55a.pdf

 9.18. Size:970K  nxp
 buk9225-55a.pdf

BUK9225-55A N-channel TrenchMOS logic level FET Rev. 02 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 9.19. Size:969K  nxp
 buk9212-55b.pdf

BUK9212-55B N-channel TrenchMOS logic level FET Rev. 03 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 9.20. Size:756K  nxp
 buk9214-30a.pdf

BUK9214-30A N-channel TrenchMOS logic level FET Rev. 3 14 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 9.21. Size:824K  nxp
 buk9226-75a.pdf

BUK9226-75A N-channel TrenchMOS logic level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 9.22. Size:725K  nxp
 buk9215-55a.pdf

BUK9215-55A N-channel TrenchMOS logic level FET 7 April 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 complian

 9.23. Size:259K  inchange semiconductor
 buk9230-55a.pdf

isc N-Channel MOSFET Transistor BUK9230-55A FEATURES Drain Current I = 88A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Static Drain-Source On-Resistance R = 27m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.