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2sc1251.pdf Principales características:

2sc12512sc1251

2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. PACKAGE STYLE .204 4L STUD FEATURES INCLUDE Direct Replacement for NE74020 High Gain - 10 dB min. @ 1.0 GHz Gold Metalization MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE 33 OC/W JC CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 25 V BVCBO IC = 10 mA 45 V BVEBO IE = 1.0 mA 3.0 V hFE VCE = 5.0 V IC = 100 mA 20 200 --- COB VCB = 15 V f = 1.0 MHz 3.0 pF VCE = 15 V IC = 100 mA POUT = 0.5 W 13 dB PG P1dB f = 1000 MHz +27 +29 dBm A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1251.pdf Design, MOSFET, Power

 2sc1251.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1251.pdf Database, Innovation, IC, Electricity

 

 
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