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Analog Power AM3411PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7 applications are DC-DC converters and -20 0.057 @ VGS = -2.5V -4.9 power management in portable and battery-powered products such as computers, printers, cellular and cordless telephones. Low rDS(on) provides higher efficiency and 1 6 extends battery life Low thermal impedance copper leadframe 2 5 TSOP-6 saves board space Fast switching speed 3 4 High performance trench technology ESD Protected ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage V 8 GS

 

Keywords - ALL TRANSISTORS. Principales características

 am3411pe.pdf Design, MOSFET, Power

 am3411pe.pdf RoHS Compliant, Service, Triacs, Semiconductor

 am3411pe.pdf Database, Innovation, IC, Electricity

 

 
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