Todos los transistores

 

am3412n.pdf Principales características:

am3412nam3412n

Analog Power AM3412N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 27 @ VGS = 10V 6.3 Low thermal impedance 30 35 @ VGS = 4.5V 5.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TA=25 C 6.3 ID Continuous Drain Current a TA=70 C A 5.2 Pulsed Drain Current b IDM 30 IS 4.0 A Continuous Source Current (Diode Conduction) a TA=25 C 1.3 PD W Power Dissipation a TA=70 C 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Units t

 

Keywords - ALL TRANSISTORS. Principales características

 am3412n.pdf Design, MOSFET, Power

 am3412n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 am3412n.pdf Database, Innovation, IC, Electricity

 

 

 


 
↑ Back to Top
.