am3413p.pdf Principales características:
Analog Power AM3413P P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 2400 @ VGS = -10V -0.74 Low thermal impedance -200 2550 @ VGS = -4.5V -0.72 Fast switching speed TSOP-6 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage VDS -200 V Gate-Source Voltage VGS 20 TA=25 C -0.74 ID Continuous Drain Current a TA=70 C A -0.61 Pulsed Drain Current b IDM -5 IS -2 A Continuous Source Current (Diode Conduction) a TA=25 C 2 PD W Power Dissipation a TA=70 C 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum
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am3413p.pdf Design, MOSFET, Power
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