apt77n60jc3.pdf Principales características:
APT77N60JC3 600V 77A 0.035 Super Junction MOSFET COOLMOS Power Semiconductors Ultra low RDS(ON) "UL Recognized" Low Miller Capacitance ISOTOP Ultra Low Gate Charge, Qg D Avalanche Energy Rated N-Channel Enhancement Mode G Popular SOT-227 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT77N60JC3 UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25 C 77 Amps IDM Pulsed Drain Current 1 231 VGS Gate-Source Voltage Continuous 20 Volts VGSM Gate-Source Voltage Transient 30 Total Power Dissipation @ TC = 25 C 568 Watts PD Linear Derating Factor 4.55 W/ C TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 C TL Lead Temperature 0.063" from Case for 10 Sec. 300 dv /dt Drain-Source Voltage slope (VDS = 480V, I
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apt77n60jc3.pdf Design, MOSFET, Power
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apt77n60jc3.pdf Database, Innovation, IC, Electricity
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