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apt8018l2vfr.pdf Principales características:

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APT8018L2VFR 800V 43A 0.180 L2VFR POWER MOS V FREDFET TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Avalanche Energy Rated D Faster Switching FAST RECOVERY BODY DIODE G Lower Leakage S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT8018L2VFR UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25 C 43 Amps IDM Pulsed Drain Current 1 172 VGS Gate-Source Voltage Continuous 30 Volts VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25 C Watts 833 PD Linear Deratin

 

Keywords - ALL TRANSISTORS. Principales características

 apt8018l2vfr.pdf Design, MOSFET, Power

 apt8018l2vfr.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt8018l2vfr.pdf Database, Innovation, IC, Electricity

 

 
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