apt8018l2vfr.pdf Principales características:
APT8018L2VFR 800V 43A 0.180 L2VFR POWER MOS V FREDFET TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Avalanche Energy Rated D Faster Switching FAST RECOVERY BODY DIODE G Lower Leakage S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT8018L2VFR UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25 C 43 Amps IDM Pulsed Drain Current 1 172 VGS Gate-Source Voltage Continuous 30 Volts VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25 C Watts 833 PD Linear Deratin
Keywords - ALL TRANSISTORS. Principales características
apt8018l2vfr.pdf Design, MOSFET, Power
apt8018l2vfr.pdf RoHS Compliant, Service, Triacs, Semiconductor
apt8018l2vfr.pdf Database, Innovation, IC, Electricity
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet



