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2n4923.pdf Principales características:

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N4923 TO-126 E C B General Purpose Power Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION VALUE UNIT Collector -Base Voltage VCBO 80 V Collector -Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 3.0 A Base Current IB 1.0 A Power Dissipation @ Tc=25 deg C PD 30 W Derate Above 25 deg C 0.24 W/deg C Operating And Storage Junction Tj, Tstg -65 to +150 deg C Temperature Range Lead Temperature for Soldering 1/16" TL 260 deg C from Body for 10 Seconds. Thermal Resistance Junction to Case Rth (j-c) 4.16 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Sustaining Voltage VCEO(sus) IC=100mA, IB=0 80

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 2n4923.pdf Design, MOSFET, Power

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