cmpt5086 cmpt5087.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cmpt5086 cmpt5087.pdf Principales características:

CMPT5086 CMPT5087 www.centralsemi.com SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5086 and CMPT5087 are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise. MARKING CODES CMPT5086 C2P CMPT5087 C2Q SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 3.0 V Continuous Collector Current IC 50 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 C Thermal Resistance JA 357 C/W ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) CMPT5086 CMPT5087 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=10V - 10 - 10 nA ICBO VCB=35V - 50 - 50 nA BVCBO IC=1