cmpt5088 cmpt5089.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cmpt5088 cmpt5089.pdf Principales características:

CMPT5088 CMPT5089 www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING CODES CMPT5088 C1Q CMPT5089 C1R SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL CMPT5088 CMPT5089 UNITS Collector-Base Voltage VCBO 35 30 V Collector-Emitter Voltage VCEO 30 25 V Emitter-Base Voltage VEBO 4.5 V Continuous Collector Current IC 50 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 C Thermal Resistance JA 357 C/W ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) CMPT5088 CMPT5089 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=20V - 50 - - nA ICBO V