cmpt6428 cmpt6429.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cmpt6428 cmpt6429.pdf Principales características:

CMPT6428 CMPT6429 www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT6428 and CMPT6429 are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high gain amplifier applications. MARKING CODES CMPT6428 C1K CMPT6429 C1L SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL CMPT6428 CMPT6429 UNITS Collector-Base Voltage VCBO 60 55 V Collector-Emitter Voltage VCEO 50 45 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 200 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 C Thermal Resistance JA 357 C/W ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) CMPT6428 CMPT6429 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=30V - 10 - 10 nA ICEO VCE=30V - 100 - 100 n