Todos los transistores

ced2303 ceu2303.pdf Principales características:

CED2303/CEU2303 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -9A, RDS(ON) = 200m @VGS = -10V. RDS(ON) = 320m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID -9 A Drain Current-Pulsed a IDM -27 A Maximum Power Dissipation @ TC = 25 C 33 W PD - Derate above 25 C 0.22 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 4.5 C/W Thermal Resistance, Junction-to-

Keywords - ALL TRANSISTORS. Principales características

 ced2303 ceu2303.pdf Design, MOSFET, Power

 ced2303 ceu2303.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ced2303 ceu2303.pdf Database, Innovation, IC, Electricity