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cep02n65g ceb02n65g cef02n65g.pdf Principales características:

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65G 650V 5.5 2A 10V CEB02N65G 650V 5.5 2A 10V CEF02N65G 650V 5.5 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS V 30 Drain Current-Continuous @ TC = 25 C 2 2 d A ID @ TC = 100 C A 1 1 d Drain Current-Pulsed a IDM e 8 8 d A Maximum Power Dissipation @ TC = 25 C 60 28 W PD - Derate above 25 C 0.48 0.22 W/ C Single Pulsed Avalanche Energy g EAS 11.25 mJ IAS 1.5 A Single Pulsed Avalanche Current g Operatin

Keywords - ALL TRANSISTORS. Principales características

 cep02n65g ceb02n65g cef02n65g.pdf Design, MOSFET, Power

 cep02n65g ceb02n65g cef02n65g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cep02n65g ceb02n65g cef02n65g.pdf Database, Innovation, IC, Electricity