cep02n6g ceb02n6g cef02n6g.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep02n6g ceb02n6g cef02n6g.pdf Principales características:

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5 2.2A 10V CEB02N6G 600V 5 2.2A 10V CEF02N6G 600V 5 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS V 30 Drain Current-Continuous @ TC = 25 C 2.2 2.2 d A ID @ TC = 100 C A 1.4 1.4d Drain Current-Pulsed a IDM e 8.8 8.8 d A Maximum Power Dissipation @ TC = 25 C 60 33 W PD - Derate above 25 C 0.48 0.26 W/ C Single Pulsed Avalanche Energy g EAS 11.25 mJ IAS 1.5 A Single Pulsed Avalanche Current g Ope