cep04n6 ceb04n6 cef04n6.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep04n6 ceb04n6 cef04n6.pdf Principales características:

CEP04N6/CEB04N6 CEF04N6 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N6 600V 2.4 4.2A 10V CEB04N6 600V 2.4 4.2A 10V CEF04N6 600V 2.4 4.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS V 30 Drain Current-Continuous @ TC = 25 C 4.2 4.2 d A ID @ TC = 100 C A 2.6 2.6 d Drain Current-Pulsed a IDM e 16.8 16.8 d A Maximum Power Dissipation @ TC = 25 C 104 35 W PD - Derate above 25 C 0.83 0.28 W/ C Single Pulsed Avalanche Energy g EAS 242 mJ IAS 4.4 A Single Pulsed Avala