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cep10n4 ceb10n4 cei10n4 cef10n4.pdf Principales características:

CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP10N4 450V 0.7 10A 10V CEB10N4 450V 0.7 10A 10V CEI10N4 450V 0.7 10A 10V CEF10N4 450V 0.7 10A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G S CEB SERIES CEI SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-262(I2-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263/262 TO-220F Drain-Source Voltage VDS 450 V Gate-Source Voltage VGS V 30 Drain Current-Continuous ID 10 10 e A Drain Current-Pulsed a IDM f 40 40 e A Maximum Power Dissipation @ TC = 25 C 125 45 W PD - Derate above 25 C 1.0 0.36 W/ C Single

Keywords - ALL TRANSISTORS. Principales características

 cep10n4 ceb10n4 cei10n4 cef10n4.pdf Design, MOSFET, Power

 cep10n4 ceb10n4 cei10n4 cef10n4.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cep10n4 ceb10n4 cei10n4 cef10n4.pdf Database, Innovation, IC, Electricity