cep16n10 ceb16n10.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep16n10 ceb16n10.pdf Principales características:

CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 15.2 A Drain Current-Pulsed a IDM 60 A Maximum Power Dissipation @ TC = 25 C 60 W PD - Derate above 25 C 0.48 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 2.5 C/W Thermal Resistance, Junction-to-Ambient R JA 50 C/W Rev 1. 2010.Jan. Details are subje