cep6086l ceb6086l.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep6086l ceb6086l.pdf Principales características:

CEP6086L/CEB6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 72A, RDS(ON) = 10m @VGS = 10V. RDS(ON) = 13.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedz Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous @ TC = 25 C 72 A ID @ TC = 100 C 51 A Drain Current-Pulsed a IDM 288 A Maximum Power Dissipation @ TC = 25 C 75 W PD - Derate above 25 C 0.5 W/ C EAS 132 Single Pulsed Avalanche Energy d mJ IAS Single Pulsed Avalanche Current d 23 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics