cep83a3g ceb83a3g.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep83a3g ceb83a3g.pdf Principales características:

CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS(ON) = 4.2 m @VGS = 10V. RDS(ON) = 6.2 m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Drain Current-Continuous @ TC = 25 C 102 A ID @ TC = 100 C A 72 Drain Current-Pulsed a IDM 408 A Maximum Power Dissipation @ TC = 25 C 83 W PD - Derate above 25 C 0.55 W/ C Single Pulsed Avalanche Energy d EAS 151 mJ IAS 55 A Single Pulsed Avalanche Current d Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics