cep840a ceb840a cef840a.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep840a ceb840a cef840a.pdf Principales características:

CEP840A/CEB840A CEF840A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP840A 500V 0.85 8.5A 10V CEB840A 500V 0.85 8.5A 10V CEF840A 500V 0.85 8.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS V 30 Drain Current-Continuous @ TC = 25 C 8.5 d A 8.5 ID @ TC = 100 C 6 6 d A Drain Current-Pulsed a IDM e 34 34 d A Maximum Power Dissipation @ TC = 25 C 150 48 W PD - Derate above 25 C 0.3 W/ C 1 Single Pulsed Avalanche Energy h EAS 196 mJ IAS Single Pulsed Avalanche Current