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Spec. No. C210N3-H Issued Date 2003.06.12 CYStech Electronics Corp. Revised Date 2010.07.14 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400V IC 300mA BTNA44N3 RCESAT(typ.) 10 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V C B CE(sat) = 0.1V at I /I =10mA/1mA. Complementary to BTPA94N3 Pb-free package Symbol Outline BTNA44N3 SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 500 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA Power Dissipation PD 350 (Note) mW Thermal Resistance, Junction to Ambient R JA 357 C/W Junction Temperature Tj 150 C Storage Temperature Tstg -55 +150 C Note When mounted on a FR-5 board

 

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