zxmp3f35n8.pdf Principales características:
ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) ( ) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection applications Features Low on-resistance Low gate drive SO8 package Applications Power management functions S D Disconnect switches S D Reverse battery protection S D Ordering information G D Top view Device Reel size Tape width Quantity (inches) (mm) per reel ZXMP3F35N8TA 7 12 500 Device marking ZXMP 3F35 Issue 1 - August 2008 1 www.zetex.com Diodes Incorporated 2008 www.diodes.com ZXMP3F35N8 Absolute maximum ratings Parameter Symbol Lim
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