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2n7002dw.pdf Principales características:

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October 2007 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant SC70-6 (SOT363) 1 1 Marking 2N Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS 1.0M 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 ID Drain Current Continuous 115 Continuous @ 100 C 73 mA Pulsed 800 TJ , TSTG Junction and Storage Temperature Range -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Tot

 

Keywords - ALL TRANSISTORS. Principales características

 2n7002dw.pdf Design, MOSFET, Power

 2n7002dw.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7002dw.pdf Database, Innovation, IC, Electricity

 

 
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