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fdmc86102lz.pdf Principales características:

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April 2011 FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 A that has been special tailored to minimize the on-state HBM ESD protection level > 6 KV typical (Note 4) resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. 100% UIL Tested RoHS Compliant Application DC - DC Switching Bottom Top Pin 1 5 4 G D G S S S D 6 S 3 D S 7 2 D D D S D 8 1 D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage 20 V Drain Current -

 

Keywords - ALL TRANSISTORS. Principales características

 fdmc86102lz.pdf Design, MOSFET, Power

 fdmc86102lz.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdmc86102lz.pdf Database, Innovation, IC, Electricity

 

 

 


 
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