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September 2012 FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 m Features General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 A been especially tailored to minimize the on-state resistance and Advanced Package and Silicon combination for low rDS(on) yet maintain superior switching performance. and high efficiency 100% UIL Tested Applications RoHS Compliant Primary MOSFET MV synchronous rectifier Bottom Top Pin 1 S S D S S G S D S D D D D G D D Power 33 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage 20 V Drain Current -Continuous TC = 25 C 13 ID -Continu

 

Keywords - ALL TRANSISTORS. Principales características

 fdmc86248.pdf Design, MOSFET, Power

 fdmc86248.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdmc86248.pdf Database, Innovation, IC, Electricity

 

 

 


 
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