fdms86540.pdf Principales características:
October 2014 FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 m Features General Description Max rDS(on) = 3.4 m at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 8 V, ID = 18.5 A ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low rDS(on) conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body and high efficiency diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design Primary Switch in isolated DC-DC 100% UIL tested Synchronous Rectifier RoHS Compliant Load Switch Bottom Top Pin 1 S D S S S D
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fdms86540.pdf Design, MOSFET, Power
fdms86540.pdf RoHS Compliant, Service, Triacs, Semiconductor
fdms86540.pdf Database, Innovation, IC, Electricity
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