fdms86550et60.pdf datasheet:

January 2015 FDMS86550ET60 N-Channel PowerTrench MOSFET 60 V, 245 A, 1.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 A been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 2.2 m at VGS = 8 V, ID = 27 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Applications MSL1 robust package design Primary DC-DC MOSFET 100% UIL tested Secondary Synchronous Rectifier RoHS Compliant Load Switch Bottom Top Pin 1 S S D S Pin 1 S G D S D S D D D D G D Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Vo