fqa13n50cf.pdf Principales características:
July 2007 FRFET FQA13N50CF 500V N-Channel MOSFET Features Description 15A, 500V, RDS(on) = 0.48 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 43nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the avalanche Improved dv/dt capability and commutation mode. These devices are well suited for high Fast recovery body diode (typical 100ns) efficient switched mode power supplies, active power factor RoHS compliant correction, electronic lamp ballast based on half bridge topology. D G TO-3PN FQA Series G D S S Absolute Ma
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fqa13n50cf.pdf Design, MOSFET, Power
fqa13n50cf.pdf RoHS Compliant, Service, Triacs, Semiconductor
fqa13n50cf.pdf Database, Innovation, IC, Electricity
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