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November 2013 FQD5N15 N-Channel QFET MOSFET 150 V, 4.3 A, 800 m Description Features This N-Channel enhancement mode power MOSFET is 4.3 A, 150 V, RDS(on) = 800 m (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary ID = 2.15 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 5.4 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior Low Crss (Typ. 7.5 pF) switching performance and high avalanche energy 100% Avalanche Tested strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. D D G G S D-PAK S o Absolute Maximum Ratings TC = 25 C unless otherwise noted. SymboI Parameter FQD5N15TM Unit VDSS Drain-Source Voltage 150 V ID Drain Current - C

 

Keywords - ALL TRANSISTORS. Principales características

 fqd5n15.pdf Design, MOSFET, Power

 fqd5n15.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd5n15.pdf Database, Innovation, IC, Electricity

 

 
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