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fqpf9n30.pdf Principales características:

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May 2000 TM QFET QFET QFET QFET FQPF9N30 300V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.0A, 300V, RDS(on) = 0.45 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter FQPF9N30 Units VDSS Drain-Source

 

Keywords - ALL TRANSISTORS. Principales características

 fqpf9n30.pdf Design, MOSFET, Power

 fqpf9n30.pdf RoHS Compliant, Service, Triacs, Semiconductor

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