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fqs4900.pdf Principales características:

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August 2000 TM QFET QFET QFET QFET FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power N-Channel 1.3A, 60V, RDS(on) = 0.55 @ VGS = 10 V field effect transistors are produced using Fairchild s RDS(on) = 0.65 @ VGS = 5 V proprietary, planar stripe, DMOS technology. P-Channel -0.3A, -300V, RDS(on) = 15.5 @ VGS = -10 V This advanced technology has been especially tailored to RDS(on) = 16 @ VGS =- 5 V minimize on-state resistance, provide superior switching Low gate charge ( typical N-Channel 1.6 nC) performance, and withstand high energy pulse in the ( typical P-Channel 3.6 nC) avalanche and commutation mode. This device is well Fast switching suited for high interface in telephone sets. Improved dv/dt capability 5 4 D2 6 3 D2 D1 G2 D1 S2 G1 7 2 S1 8 1

 

Keywords - ALL TRANSISTORS. Principales características

 fqs4900.pdf Design, MOSFET, Power

 fqs4900.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqs4900.pdf Database, Innovation, IC, Electricity

 

 
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